Researchers at ASU have developed a high-power type-III-nitride vertical transistor with an active buried current blocking layer and aperture that can be grown in situ without a regrowth process. Multiple thin top layers below the transistor’s source define two conductive GaN channels. This “multiple channel” architecture takes advantage of high aluminum compositions to create a very high charge, generating a polarization field that conveniently forms the current blocking layer and aperture. All functionality of the device is achieved by polarization engineering and not by doping or implementation, significantly simplifying fabrication. This eliminates the need for regrowth techniques or ion implantation, which lowers manufacturing costs and produces dependable transistors with greater performance.
- Amplifiers and Oscillators
- DC-DC, DC-AC, AC-DC, AC-AC Power Converters
- High-Power Transistors
- Low RON III-Nitride Vertical Transistors
- Two-Channel Depletion Mode III-Nitride Vertical Transistors
- S-Band or Radio Frequency Devices
Benefits and Advantages
- Economical – Cuts manufacturing costs by simplifying fabrication and reducing product defects.
- High-Quality – No implantation steps or other confinement steps required that may degrade electrical performance.
- Novel vertical III-Nitride based transistor with single crystal growth, assisted and modulated by tunneling of electrons.
- No interruption of the fabrication process to regrow epitaxial layers.
- Current blocking layer is obtained by polarization doped barrier.
- The simplicity of the fabrication technique streamlines its implementation.
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