As electronic devices become smaller, the need for higher efficiency electronic devices increases. Gallium nitride (GaN)-based materials recently emerged as a research focal point due to their greater power conversion efficiency compared to silicon-based materials. As a result, these materials produce smaller, faster transistors that can withstand and operate in higher electric fields and temperatures. However, electric current leaks through the aperture region in the structure reducing overall efficiency. To address this, a current blocking layer (CBL) grown by MOVCD (an expensive process) suppresses excess current from leaking. This results in an increased cost and introduces structural defects. Therefore, there exists a need to create an aperture region through the CBL in order to create an effective transistor that prevents current leakage at a reduced manufacturing cost.
Researchers at ASU have developed a method to form a CBL as part of the base structure of the transistor with an aperture region formed by ion implantation. Ion implantation at selected areas gives researchers better control over electrical properties. The selective ion implantation in the aperture regioin enables in situ doped CBL, which has a better current blocking ability and provides a method to produce regrowth-free GaN vertical transistors. This innovative method gives better current blocking, lower cost, and overall manufacturability.
- GaN vertical transistors
- Personal electronic devices
Benefits and Advantages
- Regrowth-Free Transistor – The method produces vertical transistors without unwanted growth from ion implantation, allowing higher current flow and improved performance
- Lower Cost – Selective area doping allows better control of electrical properties and simplifies manufacturing, leading to a reduction in overall cost
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