Researchers at ASU have developed a nanosphere lithography technique with enhanced control over the size of the silica spheres. Using low cost procedures such as reactive ion etching (RIE) for dry etching or potassium hydroxide (KOH) etching for wet etching, sphere size can be adjusted without re-optimization of the deposition process and can be arranged with identical shape and size or a mix of various shapes and sizes. Additionally, treating the surface with ultraviolet ozone removes the organic residue left behind by both kinds of etching that causes further spatial inconsistencies. This lithography technique was experimentally verified to produce uniformly patterned surfaces with adjustable interspacing between structures, providing manufacturers with an economical process for creating nanostructured surfaces that are ideal for light management.
- Optoelectronic Device Manufacturing
- Photovoltaic Design
- Semiconductor Fabrication
Benefits and Advantages
- Economical –Uses low cost procedures such as RIE and KOH etching to modify sphere size and spacing.
- Effective – Can be applied over large surfaces areas needed for manufacturing.
- Innovative – Adjustable interspacing between nanostructures facilitates novel semiconductor designs ideal for light management.
- Reliable – Ultraviolet ozone treatment provides consistent uniform etching for superior product fabrication.
For more information about the inventor(s) and their research, please see